@Article{UedaSMMROPR:2017:NePoPl,
author = "Ueda, M{\'a}rio and Silva Junior, Ataide Ribeiro da and Mitma
Pillaca, Elver Juan de Dios and Mariano, Samantha de F{\'a}tima
Magalh{\~a}es and Rossi, Jos{\'e} Osvaldo and Oliveira,
Rog{\'e}rio de Moraes and Pichon, L. and Reuther, H.",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais
(INPE)} and {Instituto Nacional de Pesquisas Espaciais (INPE)} and
{CNRS-Universit{\'e} de Poitiers-ENSMA} and {Helmholtz-Zentrum
Dresden-Rossendorf}",
title = "New possibilities of plasma immersion ion implantation (PIII) and
deposition (PIII\&D) in industrial components using metal tube
fixtures",
journal = "Surface and Coatings Technology",
year = "2017",
volume = "312",
pages = "37--46",
month = "Feb.",
keywords = "Batch processing, Hollow cathode plasma, Industrial components,
Metal tube fixture, Plasma immersion ion implantation, Plasma
immersion ion implantation and deposition.",
abstract = "New possibilities of Plasma Immersion Ion Implantation (PIII) and
deposition (PIII\&D) for treating industrial components in the
batch mode have been explored. A metal tubular fixture is used to
allocate the components inside around and along the tube, exposing
to the plasma only the parts of each component that will be
implanted. Hollow cathode- like plasma is generated only inside
the tube filled with the desired gas, by applying high negative
voltage pulses to the hollow cylindrical metal fixture which is
insulated from the vacuum chamber walls. The metal tube (Me-tube)
loaded with workpieces can be set-up inside the vacuum chamber in
the standing-up, upside down or lying down arrangements. PIII
tests were also run with and without metal sheet lids on the tube
as well as with and without the components. Sputtering deposition
and carbonitriding are also possible in this scheme by placing
carbon tapes inside the tube and running the process with nitrogen
PIII. Relatively clean DLC (Diamond Like Carbon) PIII\&D
deposition is possible by this method also since the plasma
occupies mainly the Me-tube interior and not the whole chamber.
Furthermore, operating high density PIII and PIII\&D systems
without additional plasma source, using only the high voltage
pulser, is now possible to treat three dimensional parts. These
methods are very convenient for batch processing of industrial
parts by ion implantation and by ion implantation and deposition,
in which a large number of small to medium size components can be
treated by PIII and PIII\&D, very quickly, efficiently and also
at low cost.",
doi = "10.1016/j.surfcoat.2016.08.067",
url = "http://dx.doi.org/10.1016/j.surfcoat.2016.08.067",
issn = "0257-8972",
language = "en",
targetfile = "ueda_new.pdf",
urlaccessdate = "03 maio 2024"
}